All MOSFET. SWP11N65D Datasheet

 

SWP11N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWP11N65D
   Marking Code: SW11N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220

 SWP11N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWP11N65D Datasheet (PDF)

 ..1. Size:813K  samwin
 swp11n65d swf11n65d swu11n65d.pdf

SWP11N65D SWP11N65D

SW11N65D N-channel Enhanced mode TO-220/TO-220F/TO-262 MOSFET TO-220 TO-220F TO-262 BVDSS : 650V Features ID : 11A High ruggedness RDS(ON) : 0.75 Low RDS(ON) (Typ 0.75)@VGS=10V Low Gate Charge (Typ 43nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 1 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Source

 9.1. Size:654K  samwin
 swp110r06vt.pdf

SWP11N65D SWP11N65D

SW110R06VTN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220 BVDSS : 60V High ruggednessID : 85A Low RDS(ON) (Typ 11m)@VGS=4.5V(Typ 9.6m)@VGS=10VRDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 69nC)9.6m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 223 Application: Electronic Ballast, Motor Control, Synchronous Rectificati

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF6721S

 

 
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