SWP11N65D MOSFET. Datasheet pdf. Equivalent
Type Designator: SWP11N65D
Marking Code: SW11N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 43 nC
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 152 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO220
SWP11N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWP11N65D Datasheet (PDF)
swp11n65d swf11n65d swu11n65d.pdf
SW11N65D N-channel Enhanced mode TO-220/TO-220F/TO-262 MOSFET TO-220 TO-220F TO-262 BVDSS : 650V Features ID : 11A High ruggedness RDS(ON) : 0.75 Low RDS(ON) (Typ 0.75)@VGS=10V Low Gate Charge (Typ 43nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 1 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Source
swp110r06vt.pdf
SW110R06VTN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220 BVDSS : 60V High ruggednessID : 85A Low RDS(ON) (Typ 11m)@VGS=4.5V(Typ 9.6m)@VGS=10VRDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 69nC)9.6m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 223 Application: Electronic Ballast, Motor Control, Synchronous Rectificati
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
