All MOSFET. SWP13N50D Datasheet

 

SWP13N50D Datasheet and Replacement


   Type Designator: SWP13N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO220
 

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SWP13N50D Datasheet (PDF)

 ..1. Size:816K  samwin
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SWP13N50D

SW13N50D N-channel Enhancement mode TO-220F/TO-220 MOSFET TO-220F BVDSS : 500V Features TO-220 ID : 13A High ruggedness RDS(ON) : 0.46 RDS(ON) (Typ 0.46)@VGS=10V Gate Charge (Typ 47nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application:LED,Charger 3 3 1 1. Gate 2. Drain 3. Source 3 General Description Thi

 8.1. Size:1576K  samwin
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SWP13N50D

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS : 650V High ruggedness 5 ID : 13A 1 8 Low RDS(ON) (Typ 0.24) 2 7 6 @VGS=10V 3 RDS(ON) : 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3

Datasheet: SWP100N10A , SWP100N10B , SWP100R10VT , SWP10N50K , SWP10N65D , SWP10N65K , SWP110R06VT , SWP11N65D , IRFP250 , SWP13N65K2 , SWP160R12VT , SWP17N80K , SWP180N75A , SWP19N10 , SWP20N65K , SWP3205B , SWP340R10VT .

History: FTK2N65P

Keywords - SWP13N50D MOSFET datasheet

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