SWP13N50D PDF and Equivalents Search

 

SWP13N50D Specs and Replacement

Type Designator: SWP13N50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: TO220

SWP13N50D substitution

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SWP13N50D datasheet

 ..1. Size:816K  samwin
 swf13n50d swp13n50d.pdf pdf_icon

SWP13N50D

SW13N50D N-channel Enhancement mode TO-220F/TO-220 MOSFET TO-220F BVDSS 500V Features TO-220 ID 13A High ruggedness RDS(ON) 0.46 RDS(ON) (Typ 0.46 )@VGS=10V Gate Charge (Typ 47nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application LED,Charger 3 3 1 1. Gate 2. Drain 3. Source 3 General Description Thi... See More ⇒

 8.1. Size:1576K  samwin
 swf13n65k2 swi13n65k2 swd13n65k2 swp13n65k2 swj13n65k2 swb13n65k2 swha13n65k2 swhc13n65k2.pdf pdf_icon

SWP13N50D

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS 650V High ruggedness 5 ID 13A 1 8 Low RDS(ON) (Typ 0.24 ) 2 7 6 @VGS=10V 3 RDS(ON) 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3... See More ⇒

Detailed specifications: SWP100N10A , SWP100N10B , SWP100R10VT , SWP10N50K , SWP10N65D , SWP10N65K , SWP110R06VT , SWP11N65D , AON7506 , SWP13N65K2 , SWP160R12VT , SWP17N80K , SWP180N75A , SWP19N10 , SWP20N65K , SWP3205B , SWP340R10VT .

Keywords - SWP13N50D MOSFET specs

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