SWP160R12VT MOSFET. Datasheet pdf. Equivalent
Type Designator: SWP160R12VT
Marking Code: SW160R12VT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 176 W
Maximum Drain-Source Voltage |Vds|: 120 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 64 nC
Rise Time (tr): 65 nS
Drain-Source Capacitance (Cd): 211 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: TO220
SWP160R12VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWP160R12VT Datasheet (PDF)
swp160r12vt.pdf
SW160R12VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS : 120V High ruggedness ID : 50A Low RDS(ON) (Typ 16.4m)@VGS=4.5V Low RDS(ON) (Typ 14.6m)@VGS=10V RDS(ON) : 16.4m@VGS=4.5V Low Gate Charge (Typ 64nC) 14.6m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 3 Application:Synchronous Rectifi
sw16n65k swp16n65k swf16n65k swb16n65k.pdf
SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source
swp16n65k swf16n65k swb16n65k.pdf
SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
