SWP17N80K MOSFET. Datasheet pdf. Equivalent
Type Designator: SWP17N80K
Marking Code: SW17N80K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 77 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
Package: TO220
SWP17N80K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWP17N80K Datasheet (PDF)
..1. Size:697K samwin
swf17n80k swp17n80k.pdf
swf17n80k swp17n80k.pdf
SW17N80K N-channel Enhanced mode TO-220F/TO-220 MOSFET TO-220F TO-220 BVDSS : 800V Features ID : 17A High ruggedness RDS(ON) : 0.31 Low RDS(ON) (Typ 0.31)@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source 3 General Descr
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
