SWP19N10 Specs and Replacement
Type Designator: SWP19N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 108 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO220
SWP19N10 substitution
- MOSFET ⓘ Cross-Reference Search
SWP19N10 datasheet
swp19n10 swd19n10 swi19n10.pdf
SW19N10 N-channel Enhanced mode TO-220/TO-252/TO-251 MOSFET Features BVDSS 100V TO-220 TO-252 TO-251 ID 19A High ruggedness Low RDS(ON) (Typ 0.1 )@VGS=10V RDS(ON) 0.1 Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application Synchronous Rectification, 3 3 3 Li Battery Protect Boa... See More ⇒
Detailed specifications: SWP10N65K, SWP110R06VT, SWP11N65D, SWP13N50D, SWP13N65K2, SWP160R12VT, SWP17N80K, SWP180N75A, BS170, SWP20N65K, SWP3205B, SWP340R10VT, SWP540, SWP630A1, SWP640D, SWP70N10V, SWP740D
Keywords - SWP19N10 MOSFET specs
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