All MOSFET. SWP19N10 Datasheet

 

SWP19N10 Datasheet and Replacement


   Type Designator: SWP19N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO220
 

 SWP19N10 substitution

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SWP19N10 Datasheet (PDF)

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SWP19N10

SW19N10 N-channel Enhanced mode TO-220/TO-252/TO-251 MOSFET Features BVDSS :100V TO-220 TO-252 TO-251 ID : 19A High ruggedness Low RDS(ON) (Typ 0.1)@VGS=10V RDS(ON) : 0.1 Low Gate Charge (Typ 15nC) Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 2 2 Application:Synchronous Rectification, 3 3 3 Li Battery Protect Boa

Datasheet: SWP10N65K , SWP110R06VT , SWP11N65D , SWP13N50D , SWP13N65K2 , SWP160R12VT , SWP17N80K , SWP180N75A , 18N50 , SWP20N65K , SWP3205B , SWP340R10VT , SWP540 , SWP630A1 , SWP640D , SWP70N10V , SWP740D .

History: NCE60N1K0I | AOE6932 | AP4543GEH-HF | TSM75N75CZ | PDN2309S

Keywords - SWP19N10 MOSFET datasheet

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