SWP630A1 PDF and Equivalents Search

 

SWP630A1 Specs and Replacement

Type Designator: SWP630A1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 152 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm

Package: TO220

SWP630A1 substitution

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SWP630A1 datasheet

 ..1. Size:581K  samwin
 swp630a1.pdf pdf_icon

SWP630A1

SW630A1 N-channel Enhanced mode TO-220 MOSFET TO-220 BVDSS 200V Features ID 10A High ruggedness RDS(ON) 0.34 Low RDS(ON) (Typ 0.34 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This power... See More ⇒

 8.1. Size:764K  samwin
 sw630d swp630d swd630d.pdf pdf_icon

SWP630A1

SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS 200V High ruggedness ID 9A Low RDS(ON) (Typ 0.27 )@VGS=10V RDS(ON) 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G... See More ⇒

 8.2. Size:742K  samwin
 sw630 swp630 swf630 swd630.pdf pdf_icon

SWP630A1

SAMWIN SW630 N-channel MOSFET TO-220F TO-220 TO-252 Features BVDSS 200V High ruggedness ID 10A RDS(ON) (Max 0.4 )@VGS=10V Gate Charge (Typ 20nC) RDS(ON) 0.4ohm 1 Improved dv/dt Capability 2 100% Avalanche Tested 1 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 This power MOSFET is produced with advanced VDMOS technology of SAMW... See More ⇒

 8.3. Size:780K  samwin
 swp630d swd630d.pdf pdf_icon

SWP630A1

SW630D N-channel Enhanced mode TO-220/TO-252 MOSFET Features TO-220 TO-252 BVDSS 200V High ruggedness ID 9A Low RDS(ON) (Typ 0.27 )@VGS=10V RDS(ON) 0.27 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 DC-DC 1 1. Gate 2. Drain 3. Source 3 G... See More ⇒

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Detailed specifications: SWP160R12VT, SWP17N80K, SWP180N75A, SWP19N10, SWP20N65K, SWP3205B, SWP340R10VT, SWP540, 10N65, SWP640D, SWP70N10V, SWP740D, SWP7N65K, SWP7N70K, SWP80N08V1, SWP830D1, SWP8N65D

Keywords - SWP630A1 MOSFET specs

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