SWP640D Datasheet and Replacement
Type Designator: SWP640D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 119 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220
SWP640D substitution
SWP640D Datasheet (PDF)
swp640d swy640d swb640d.pdf

SW640D N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET TO-220 TO-220FT TO-263 BVDSS : 200V Features ID : 18A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 38nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Sour
Datasheet: SWP17N80K , SWP180N75A , SWP19N10 , SWP20N65K , SWP3205B , SWP340R10VT , SWP540 , SWP630A1 , 13N50 , SWP70N10V , SWP740D , SWP7N65K , SWP7N70K , SWP80N08V1 , SWP830D1 , SWP8N65D , SWP9N25D .
History: SVF12N60S | SIHFI720G
Keywords - SWP640D MOSFET datasheet
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History: SVF12N60S | SIHFI720G



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