All MOSFET. SWP640D Datasheet

 

SWP640D Datasheet and Replacement


   Type Designator: SWP640D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 119 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
 

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SWP640D Datasheet (PDF)

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SWP640D

SW640D N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET TO-220 TO-220FT TO-263 BVDSS : 200V Features ID : 18A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 38nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Sour

Datasheet: SWP17N80K , SWP180N75A , SWP19N10 , SWP20N65K , SWP3205B , SWP340R10VT , SWP540 , SWP630A1 , 10N65 , SWP70N10V , SWP740D , SWP7N65K , SWP7N70K , SWP80N08V1 , SWP830D1 , SWP8N65D , SWP9N25D .

History: SFP045N100BC3 | KMB6D0NS30QA | UPA1951 | 2SK3831 | SIS888DN | BUK9Y7R6-40E | KMB6D0DN30QB

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