All MOSFET. SWP830D1 Datasheet

 

SWP830D1 Datasheet and Replacement


   Type Designator: SWP830D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 123.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.54 Ohm
   Package: TO220
 

 SWP830D1 substitution

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SWP830D1 Datasheet (PDF)

 ..1. Size:1198K  samwin
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SWP830D1

SW830D1 N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFET TO-220 TO-251 TO-252 TO-220F BVDSS : 500V Features ID : 5A High ruggedness RDS(ON) : 1.33 Low RDS(ON) (Typ 1.33)@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 3 Application: DC-DCLEDPC 1 1

Datasheet: SWP540 , SWP630A1 , SWP640D , SWP70N10V , SWP740D , SWP7N65K , SWP7N70K , SWP80N08V1 , CS150N03A8 , SWP8N65D , SWP9N25D , SWP9N50D , SWR601Q , SWSA1N60DC , SWSA2N40D , SWSI2N40DC , SWSI4N40DC .

History: HY3208PM | STD5NK50ZT4 | SSM3J312T | FDU8778 | GSM501DEA | 6N60KG-TA3-T | NCEP60T15AG

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