SWP830D1 PDF and Equivalents Search

 

SWP830D1 Specs and Replacement

Type Designator: SWP830D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 123.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.54 Ohm

Package: TO220

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SWP830D1 datasheet

 ..1. Size:1198K  samwin
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SWP830D1

SW830D1 N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F MOSFET TO-220 TO-251 TO-252 TO-220F BVDSS 500V Features ID 5A High ruggedness RDS(ON) 1.33 Low RDS(ON) (Typ 1.33 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 3 Application DC-DC LED PC 1 1... See More ⇒

Detailed specifications: SWP540, SWP630A1, SWP640D, SWP70N10V, SWP740D, SWP7N65K, SWP7N70K, SWP80N08V1, IRF520, SWP8N65D, SWP9N25D, SWP9N50D, SWR601Q, SWSA1N60DC, SWSA2N40D, SWSI2N40DC, SWSI4N40DC

Keywords - SWP830D1 MOSFET specs

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