All MOSFET. SWP9N25D Datasheet

 

SWP9N25D Datasheet and Replacement


   Type Designator: SWP9N25D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220
 

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SWP9N25D Datasheet (PDF)

 ..1. Size:824K  samwin
 swp9n25d swd9n25d.pdf pdf_icon

SWP9N25D

SW9N25D N-channel Enhanced mode TO-220/TO-252 MOSFET BVDSS : 250V Features TO-220 TO-252 ID : 9A High ruggedness RDS(ON) : 0.37 Low RDS(ON) (Typ 0.37)@VGS=10V Low Gate Charge (Typ 20.3nC) 2 Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 3 1 Application: LED , DC-DC 1. Gate 2. Drain 3. Source 3 General Description

 9.1. Size:1249K  samwin
 swf9n50d swp9n50d swd9n50d.pdf pdf_icon

SWP9N25D

SW9N50D N-channel Enhanced mode TO-220F/TO-220/TO-252 MOSFET Features TO-252 TO-220F TO-220 BVDSS : 500V ID : 9A High ruggedness Low RDS(ON) (Typ 0.68)@VGS=10V RDS(ON) : 0.68 Low Gate Charge (Typ 31nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 2 2 2 Application: DC-DCLEDPC 3 3 3 1. Gate 2. Drain 3. Source

Datasheet: SWP640D , SWP70N10V , SWP740D , SWP7N65K , SWP7N70K , SWP80N08V1 , SWP830D1 , SWP8N65D , IRF2807 , SWP9N50D , SWR601Q , SWSA1N60DC , SWSA2N40D , SWSI2N40DC , SWSI4N40DC , SWSI4N60D , SWSI4N60DA .

History: FQP4N25 | NVMTS0D6N04C | MTP2301N3

Keywords - SWP9N25D MOSFET datasheet

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