All MOSFET. SWT10N50K Datasheet

 

SWT10N50K Datasheet and Replacement


   Type Designator: SWT10N50K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO247
 

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SWT10N50K Datasheet (PDF)

 ..1. Size:1355K  samwin
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SWT10N50K

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS : 500V ID : 10A High ruggedness Low RDS(ON) (Typ 0.26)@VGS=10V RDS(ON) : 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application:LED, PC Power, Cha

Datasheet: SWR601Q , SWSA1N60DC , SWSA2N40D , SWSI2N40DC , SWSI4N40DC , SWSI4N60D , SWSI4N60DA , SWSI4N70D1 , MMIS60R580P , SWT20N50D , SWT20N65D , SWT22N65D , SWT24N50D , SWT38N60K , SWT38N65K , SWT38N65K2 , SWT38N65K2F .

History: QS5U33 | BLP04N10-B | RQA0008NXAQS | AM2394NE | PA210HV | S-LNTK2575LT1G | BR40P03

Keywords - SWT10N50K MOSFET datasheet

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