SWT10N50K PDF and Equivalents Search

 

SWT10N50K Specs and Replacement

Type Designator: SWT10N50K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO247

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SWT10N50K datasheet

 ..1. Size:1355K  samwin
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SWT10N50K

SW10N50K N-channel Enhanced mode TO-220F/TO-220/TO-247/TO-251N/TO-252 MOSFET Features TO-220F TO-220 TO-247 TO-251N TO-252 BVDSS 500V ID 10A High ruggedness Low RDS(ON) (Typ 0.26 )@VGS=10V RDS(ON) 0.26 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 2 2 2 2 2 Application LED, PC Power, Cha... See More ⇒

Detailed specifications: SWR601Q, SWSA1N60DC, SWSA2N40D, SWSI2N40DC, SWSI4N40DC, SWSI4N60D, SWSI4N60DA, SWSI4N70D1, 7N60, SWT20N50D, SWT20N65D, SWT22N65D, SWT24N50D, SWT38N60K, SWT38N65K, SWT38N65K2, SWT38N65K2F

Keywords - SWT10N50K MOSFET specs

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