All MOSFET. SWT20N65D Datasheet

 

SWT20N65D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWT20N65D
   Marking Code: SW20N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 311 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247

 SWT20N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWT20N65D Datasheet (PDF)

 ..1. Size:716K  samwin
swf20n65d swt20n65d.pdf

SWT20N65D SWT20N65D

SW20N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.31 Low RDS(ON) (Typ 0.31)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 3 General Desc

 8.1. Size:803K  samwin
swf20n50d swt20n50d.pdf

SWT20N65D SWT20N65D

SW20N50D N-channel Enhanced mode TO-220F/TO-247 MOSFET Features TO-220F TO-247 BVDSS : 500V ID : 20A High ruggedness Low RDS(ON) (Typ 0.19)@VGS=10V RDS(ON) : 0.19 Low Gate Charge (Typ 82nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Charger, Adaptor, LED 3 3 1 1. Gate 2. Drain 3. Source 3 General De

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top