All MOSFET. SWT45N60K2 Datasheet

 

SWT45N60K2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWT45N60K2
   Marking Code: SW45N60K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 337.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 74 nC
   trⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
   Package: TO247

 SWT45N60K2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWT45N60K2 Datasheet (PDF)

 ..1. Size:635K  samwin
 swt45n60k2.pdf

SWT45N60K2 SWT45N60K2

SW45N60K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 600V Features ID : 45A High ruggedness RDS(ON) : 60m Low RDS(ON) (Typ 60m)@VGS=10V Low Gate Charge (Typ 74nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , UPS 1. Gate 2. Drain 3. Source 3 General Description This power MOSF

 0.1. Size:628K  samwin
 swt45n60k2f.pdf

SWT45N60K2 SWT45N60K2

SW45N60K2F N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 600V Features ID : 45A High ruggedness RDS(ON) : 65m Low RDS(ON) (Typ 65m)@VGS=10V Low Gate Charge (Typ 74nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , UPS 1. Gate 2. Drain 3. Source 3 General Description This power MOS

 7.1. Size:655K  samwin
 swt45n65k2.pdf

SWT45N60K2 SWT45N60K2

SW45N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 45A High ruggedness RDS(ON) : 61m Low RDS(ON) (Typ 61m)@VGS=10V Low Gate Charge (Typ 74nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , UPS 1. Gate 2. Drain 3. Source 3 General Description This power MOSF

 7.2. Size:650K  samwin
 swt45n65k2f.pdf

SWT45N60K2 SWT45N60K2

SW45N65K2F N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 45A High ruggedness RDS(ON) : 66m Low RDS(ON) (Typ 66m)@VGS=10V Low Gate Charge (Typ 74nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , UPS 1. Gate 2. Drain 3. Source 3 General Description This power MOS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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