SWU11N65D MOSFET. Datasheet pdf. Equivalent
Type Designator: SWU11N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 266 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 152 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO262
SWU11N65D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWU11N65D Datasheet (PDF)
swp11n65d swf11n65d swu11n65d.pdf
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SW11N65D N-channel Enhanced mode TO-220/TO-220F/TO-262 MOSFET TO-220 TO-220F TO-262 BVDSS : 650V Features ID : 11A High ruggedness RDS(ON) : 0.75 Low RDS(ON) (Typ 0.75)@VGS=10V Low Gate Charge (Typ 43nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 1 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Source
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