SWU8N65K MOSFET. Datasheet pdf. Equivalent
Type Designator: SWU8N65K
Marking Code: SW8N65K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 34 nS
Drain-Source Capacitance (Cd): 35 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO262
SWU8N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SWU8N65K Datasheet (PDF)
swu8n65k.pdf
SW8N65K N-channel Enhanced mode TO-262 MOSFET Features BVDSS : 650V TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.53)@VGS=10V RDS(ON) : 0.53 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application:LED,Charger,PC Power 2 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOS
swu8n60d swf8n60d.pdf
SW8N60D N-channel Enhanced mode TO-262/TO-220F MOSFET Features TO-262 BVDSS : 600V TO-220F ID : 8A High ruggedness Low RDS(ON) (Typ 0.92)@VGS=10V RDS(ON) : 0.92 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application:LED,Charger,PC Power 2 3 3 1. Gate 2. Drain 3. Source 1 General Descr
swf8n80k swi8n80k swn8n80k swd8n80k swu8n80k.pdf
SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS : 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.67)@VGS=10V RDS(ON) : 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application:Adapter,LE
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
