SWU8N80K Datasheet. Specs and Replacement
Type Designator: SWU8N80K 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO262
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SWU8N80K substitution
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SWU8N80K datasheet
swf8n80k swi8n80k swn8n80k swd8n80k swu8n80k.pdf
SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID 8A High ruggedness Low RDS(ON) (Typ 0.67 )@VGS=10V RDS(ON) 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application Adapter,LE... See More ⇒
swu8n65k.pdf
SW8N65K N-channel Enhanced mode TO-262 MOSFET Features BVDSS 650V TO-262 ID 8A High ruggedness Low RDS(ON) (Typ 0.53 )@VGS=10V RDS(ON) 0.53 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application LED,Charger,PC Power 2 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOS... See More ⇒
swu8n60d swf8n60d.pdf
SW8N60D N-channel Enhanced mode TO-262/TO-220F MOSFET Features TO-262 BVDSS 600V TO-220F ID 8A High ruggedness Low RDS(ON) (Typ 0.92 )@VGS=10V RDS(ON) 0.92 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 Application LED,Charger,PC Power 2 3 3 1. Gate 2. Drain 3. Source 1 General Descr... See More ⇒
Detailed specifications: SWU100R10VT, SWU10N65D, SWU10N65K, SWU11N65D, SWU16N70K, SWU6N65K, SWU8N60D, SWU8N65K, 2N7002, SWUI7N65D, SWW20N65K, SWWF7N90D, SWX090R15ET, SWX170R15ET, SWX38N65K2F, SWY10N65D, SWY12N65D
Keywords - SWU8N80K MOSFET specs
SWU8N80K cross reference
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SWU8N80K replacement
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