All MOSFET. SWY640D Datasheet

 

SWY640D Datasheet and Replacement


   Type Designator: SWY640D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

 SWY640D substitution

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SWY640D Datasheet (PDF)

 ..1. Size:1088K  samwin
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SWY640D

SW640D N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET TO-220 TO-220FT TO-263 BVDSS : 200V Features ID : 18A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 38nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Sour

Datasheet: SWW20N65K , SWWF7N90D , SWX090R15ET , SWX170R15ET , SWX38N65K2F , SWY10N65D , SWY12N65D , SWY4N60D , IRFB4115 , SWY7N65D , SWYN4N65DD , SWYN7N65D , SWYS069R10VS , S10H06R , S10H06RN , S10H06RP , S10H06S .

History: FDP8870F085

Keywords - SWY640D MOSFET datasheet

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