All MOSFET. SWY640D Datasheet

 

SWY640D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWY640D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 29.5 W
   Maximum Drain-Source Voltage |Vds|: 200 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 18 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 57 nS
   Drain-Source Capacitance (Cd): 200 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
   Package: TO220F

 SWY640D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWY640D Datasheet (PDF)

 ..1. Size:1088K  samwin
swp640d swy640d swb640d.pdf

SWY640D
SWY640D

SW640D N-channel Enhanced mode TO-220/TO-220FT/TO-263 MOSFET TO-220 TO-220FT TO-263 BVDSS : 200V Features ID : 18A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 38nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 3 3 Application: LED , Adaptor 1. Gate 2. Drain 3. Sour

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