S10H06RP Datasheet and Replacement
Type Designator: S10H06RP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 133 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 269 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
S10H06RP Datasheet (PDF)
s10h06r s10h06s s10h06rn s10h06rp.pdf

S10H06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=100V,ID=60A DC Motor Control Rds(on)(typ)=15m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
s10h07m.pdf

S10H07MSI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures ApplicationsV =100V,I =70ADS DDC Motor ControlRds(on)(typ)=9.2m@Vgs=10VDC-DC Converters100% Avalanche TestedBMS100% Rg TestedSMPSLead-Free (RoHS Compliant)Automotive EnvironmentInternal Circuit and Pin DescriptionDDGGSSPackage
s10h08r s10h08s s10h08rn s10h08rp.pdf

S10H08R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=100V,ID=82A DC Motor Control Rds(on)(typ)=9m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD S
Datasheet: SWY4N60D , SWY640D , SWY7N65D , SWYN4N65DD , SWYN7N65D , SWYS069R10VS , S10H06R , S10H06RN , IRFP260 , S10H06S , S10H07M , S10H08R , S10H08RN , S10H08RP , S10H08S , S10H12R , S10H12RN .
History: SVF4N65D | SML50J44 | TK15A60U
Keywords - S10H06RP MOSFET datasheet
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History: SVF4N65D | SML50J44 | TK15A60U



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