S10H06RP Datasheet. Specs and Replacement
Type Designator: S10H06RP 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 133 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 269 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
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S10H06RP datasheet
s10h06r s10h06s s10h06rn s10h06rp.pdf
S10H06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=100V,ID=60A DC Motor Control Rds(on)(typ)=15m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D ... See More ⇒
s10h07m.pdf
S10H07M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications V =100V,I =70A DS D DC Motor Control Rds(on)(typ)=9.2m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G S S Package ... See More ⇒
s10h08r s10h08s s10h08rn s10h08rp.pdf
S10H08R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=100V,ID=82A DC Motor Control Rds(on)(typ)=9m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D S... See More ⇒
Detailed specifications: SWY4N60D, SWY640D, SWY7N65D, SWYN4N65DD, SWYN7N65D, SWYS069R10VS, S10H06R, S10H06RN, 2SK3878, S10H06S, S10H07M, S10H08R, S10H08RN, S10H08RP, S10H08S, S10H12R, S10H12RN
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