All MOSFET. FDS8449 Datasheet

 

FDS8449 Datasheet and Replacement


   Type Designator: FDS8449
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 7.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.7 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO-8
 

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FDS8449 Datasheet (PDF)

 ..1. Size:115K  fairchild semi
fds8449.pdf pdf_icon

FDS8449

December 2005 FDS8449 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.

 ..2. Size:249K  fairchild semi
fds8449 f085.pdf pdf_icon

FDS8449

July 2009FDS8449_F085 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.

 ..3. Size:195K  onsemi
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FDS8449

FDS8449 40V N-Channel PowerTrench MOSFET Features General Description 7.6 A, 40V RDS(on) = 29m @ VGS = 10VThese N-Channel MOSFETs are produced using ONRDS(on) = 36m @ VGS = 4.5V Semiconductors advanced PowerTrench process that has been especially tailored to minimize High power handling capability in a widely usedon-state resistance and yet maintain superior

 0.1. Size:513K  onsemi
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FDS8449

FDS8449-F085N-Channel PowerTrench MOSFET40V, 7.6A, 29m Features Typ RDS(on) = 21m at VGS = 10V, ID = 7.6A Typ RDS(on) = 26m at VGS = 4.5V, ID = 6.8A Typ Qg(5) = 7.7nC at VGS = 5V, ID = 7.6A RoHS Compliant Qualified to AEC Q101Applications Inverter Power SuppliesMOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Rat

Datasheet: SP8076EL , FDS6986AS , SP8076E , FDS6990AS , SP8076 , FDS6994S , SP8013 , FDS8447 , AO4407 , FDS8449F085 , FDS86106 , SP8010E , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 .

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