Справочник MOSFET. FDS8449

 

FDS8449 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS8449
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7.7 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.029 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS8449

 

 

FDS8449 Datasheet (PDF)

 ..1. Size:115K  fairchild semi
fds8449.pdf

FDS8449
FDS8449

December 2005 FDS8449 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.

 ..2. Size:249K  fairchild semi
fds8449 f085.pdf

FDS8449
FDS8449

July 2009FDS8449_F085 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.

 ..3. Size:195K  onsemi
fds8449.pdf

FDS8449
FDS8449

FDS8449 40V N-Channel PowerTrench MOSFET Features General Description 7.6 A, 40V RDS(on) = 29m @ VGS = 10VThese N-Channel MOSFETs are produced using ONRDS(on) = 36m @ VGS = 4.5V Semiconductors advanced PowerTrench process that has been especially tailored to minimize High power handling capability in a widely usedon-state resistance and yet maintain superior

 0.1. Size:513K  onsemi
fds8449-f085.pdf

FDS8449
FDS8449

FDS8449-F085N-Channel PowerTrench MOSFET40V, 7.6A, 29m Features Typ RDS(on) = 21m at VGS = 10V, ID = 7.6A Typ RDS(on) = 26m at VGS = 4.5V, ID = 6.8A Typ Qg(5) = 7.7nC at VGS = 5V, ID = 7.6A RoHS Compliant Qualified to AEC Q101Applications Inverter Power SuppliesMOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Rat

 8.1. Size:468K  fairchild semi
fds8447.pdf

FDS8449
FDS8449

November 2006FDS8447tmSingle N-Channel PowerTrench MOSFET 40V, 12.8A, 10.5mFeatures General DescriptionThis single N-Channel MOSFET is produced using Max rDS(on) = 10.5m at VGS = 10V, ID = 12.8AFairchild Semiconductors advanced PowerTrench Max rDS(on) = 12.3m at VGS = 4.5V, ID = 11.4A process that has been especially tailored to minimize the Low gate char

 8.2. Size:480K  onsemi
fds8447.pdf

FDS8449
FDS8449

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:1506K  cn vbsemi
fds8447.pdf

FDS8449
FDS8449

FDS8447www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectifica

Другие MOSFET... SP8076EL , FDS6986AS , SP8076E , FDS6990AS , SP8076 , FDS6994S , SP8013 , FDS8447 , IRF1010E , FDS8449F085 , FDS86106 , SP8010E , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 .

 

 
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