FDS8449 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDS8449
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 7.7 nC
trⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.029 Ohm
Тип корпуса: SO-8
FDS8449 Datasheet (PDF)
fds8449.pdf
December 2005 FDS8449 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.
fds8449 f085.pdf
July 2009FDS8449_F085 40V N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs are produced using 7.6 A, 40V RDS(on) = 29m @ VGS = 10V Fairchild Semiconductors advanced PowerTrenchprocess that has been especially tailored to minimize RDS(on) = 36m @ VGS = 4.5V on-state resistance and yet maintain superior switching performance.
fds8449.pdf
FDS8449 40V N-Channel PowerTrench MOSFET Features General Description 7.6 A, 40V RDS(on) = 29m @ VGS = 10VThese N-Channel MOSFETs are produced using ONRDS(on) = 36m @ VGS = 4.5V Semiconductors advanced PowerTrench process that has been especially tailored to minimize High power handling capability in a widely usedon-state resistance and yet maintain superior
fds8449-f085.pdf
FDS8449-F085N-Channel PowerTrench MOSFET40V, 7.6A, 29m Features Typ RDS(on) = 21m at VGS = 10V, ID = 7.6A Typ RDS(on) = 26m at VGS = 4.5V, ID = 6.8A Typ Qg(5) = 7.7nC at VGS = 5V, ID = 7.6A RoHS Compliant Qualified to AEC Q101Applications Inverter Power SuppliesMOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Rat
fds8447.pdf
November 2006FDS8447tmSingle N-Channel PowerTrench MOSFET 40V, 12.8A, 10.5mFeatures General DescriptionThis single N-Channel MOSFET is produced using Max rDS(on) = 10.5m at VGS = 10V, ID = 12.8AFairchild Semiconductors advanced PowerTrench Max rDS(on) = 12.3m at VGS = 4.5V, ID = 11.4A process that has been especially tailored to minimize the Low gate char
fds8447.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds8447.pdf
FDS8447www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectifica
Другие MOSFET... SP8076EL , FDS6986AS , SP8076E , FDS6990AS , SP8076 , FDS6994S , SP8013 , FDS8447 , IRF1010E , FDS8449F085 , FDS86106 , SP8010E , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918