S60N06M PDF and Equivalents Search

 

S60N06M Specs and Replacement

Type Designator: S60N06M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

S60N06M substitution

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S60N06M datasheet

 ..1. Size:870K  cn si-tech
s60n06m.pdf pdf_icon

S60N06M

S60N06M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications V =60V,I =60A DS D DC Motor Control Rds(on)(typ)=10.5m @Vgs=4.5V DC-DC Converters Rds(on)(typ)=8.5m @Vgs=10V BMS 100% Avalanche Tested SMPS 100% Rg Tested Automotive Environment Lead-Free (RoHS Compliant) Internal Circuit and Pin Descript... See More ⇒

 8.1. Size:688K  crhj
cs60n06 c4.pdf pdf_icon

S60N06M

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.2. Size:687K  wuxi china
cs60n06c4.pdf pdf_icon

S60N06M

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 8.3. Size:832K  cn hmsemi
hms60n06d.pdf pdf_icon

S60N06M

HMS60N06D N-Channel Super Trench Power MOSFET Description The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching and synchronous re... See More ⇒

Detailed specifications: S40N12M, S40N14R, S40N14RN, S40N14RP, S45N17R, S45N17RN, S45N17RP, S45N17S, IRF2807, S60N10M, S60N15R, S60N15RN, S60N15RP, S60N15S, S60N18R, S60N18RN, S60N18RP

Keywords - S60N06M MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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