S60N06M - описание и поиск аналогов

S60N06M SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications V =60V,I =60A DS D DC Motor Control Rds(on)(typ)=10.5m @Vgs=4.5V DC-DC Converters Rds(on)(typ)=8.5m @Vgs=10V BMS 100% Avalanche Tested SMPS 100% Rg Tested Automotive Environment Lead-Free (RoHS Compliant) Internal Circuit and Pin Descript

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

HMS60N06D N-Channel Super Trench Power MOSFET Description The HMS60N06D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching and synchronous re