All MOSFET. S80N08S Datasheet

 

S80N08S MOSFET. Datasheet pdf. Equivalent


   Type Designator: S80N08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 127 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 84 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 62 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 385 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO263

 S80N08S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S80N08S Datasheet (PDF)

 ..1. Size:392K  cn si-tech
 s80n08r s80n08s s80n08rn s80n08rp.pdf

S80N08S S80N08S

S80N08R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=80V,ID=84A DC Motor Control Rds(on)(typ)=7m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D

 8.1. Size:1245K  jilin sino
 jcs80n08i.pdf

S80N08S S80N08S

N RN-CHANNEL MOSFET JCS80N08I MAIN CHARACTERISTICS Package ID 80A VDSS 80V Rdson-max - 9m (@Vgs=10V Qg-typ 72nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap

 8.2. Size:946K  feihonltd
 fhs80n08b fhd80n08b.pdf

S80N08S S80N08S

N N-CHANNEL MOSFET FHS80N08B/FHD80N08B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 80 V Crss ( 230pF) Low Crss (typical 230pF ) Rdson-typ @Vgs=10V 8m Fast switching Qg-typ 73nC 100% 100% avalanche tested dv/dt Imp

 8.3. Size:168K  semihow
 hrs80n08k.pdf

S80N08S S80N08S

December 2014BVDSS = 80 VRDS(on) typ HRS80N08K ID = 120 A80V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 60nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.7 (Typ.) @VGS=10V 100% Avalanche Test

 8.4. Size:747K  cn vanguard
 vs80n08at.pdf

S80N08S S80N08S

VS80N08AT 80V/83A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 6.8 m N-Channel10V Logic Level Control I D 83 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS80N08AT TO-220AB 8

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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