S85N042S Datasheet. Specs and Replacement

Type Designator: S85N042S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 168 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 128 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 1745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO263

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S85N042S datasheet

 ..1. Size:344K  cn si-tech
 s85n042r s85n042s s85n042rn s85n042rp.pdf pdf_icon

S85N042S

S85N042R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=128A DC Motor Control Rds(on)(typ)=4.2m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D ... See More ⇒

 8.1. Size:275K  cn si-tech
 s85n048s.pdf pdf_icon

S85N042S

S85N048S SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=120A DC Motor Control Rds(on)(typ)=4.8m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G... See More ⇒

 9.1. Size:719K  bruckewell
 ms85n06.pdf pdf_icon

S85N042S

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS85N06 60V N-Channel MOSFET FEATURES RDS(on) (Max 0.013 )@VGS=10V Gate Charge (Typical 70nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175 C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25 C unless o... See More ⇒

 9.2. Size:169K  semihow
 hrs85n08k.pdf pdf_icon

S85N042S

Jan 2016 BVDSS = 80 V RDS(on) typ = 7 HRS85N08K ID = 110 A 80V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 7 (Typ.) @VGS=10V 100% Avalanche Tested Absol... See More ⇒

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Detailed specifications: S80N08RP, S80N08S, S80N10RN, S80N10RP, S80N22T, S85N042R, S85N042RN, S85N042RP, IRFP460, S85N048S, S85N16R, S85N16RN, S85N16RP, S85N16S, CRST037N10N, CRSS035N10N, DP3080

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