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S85N042S Spec and Replacement


   Type Designator: S85N042S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 168 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 128 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 1745 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO263

 S85N042S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S85N042S Specs

 ..1. Size:344K  cn si-tech
s85n042r s85n042s s85n042rn s85n042rp.pdf pdf_icon

S85N042S

S85N042R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=128A DC Motor Control Rds(on)(typ)=4.2m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D ... See More ⇒

 8.1. Size:275K  cn si-tech
s85n048s.pdf pdf_icon

S85N042S

S85N048S SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=85V,ID=120A DC Motor Control Rds(on)(typ)=4.8m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G... See More ⇒

 9.1. Size:719K  bruckewell
ms85n06.pdf pdf_icon

S85N042S

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS85N06 60V N-Channel MOSFET FEATURES RDS(on) (Max 0.013 )@VGS=10V Gate Charge (Typical 70nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175 C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25 C unless o... See More ⇒

 9.2. Size:169K  semihow
hrs85n08k.pdf pdf_icon

S85N042S

Jan 2016 BVDSS = 80 V RDS(on) typ = 7 HRS85N08K ID = 110 A 80V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 7 (Typ.) @VGS=10V 100% Avalanche Tested Absol... See More ⇒

Detailed specifications: S80N08RP , S80N08S , S80N10RN , S80N10RP , S80N22T , S85N042R , S85N042RN , S85N042RP , IRF640 , S85N048S , S85N16R , S85N16RN , S85N16RP , S85N16S , CRST037N10N , CRSS035N10N , DP3080 .

Keywords - S85N042S MOSFET specs

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