S85N16S Datasheet and Replacement
Type Designator: S85N16S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 153 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 665 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO263
S85N16S substitution
S85N16S Datasheet (PDF)
s85n16r s85n16s s85n16rn s85n16rp.pdf
S85N16R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=85V,ID=153A DC Motor Control Rds(on)(typ)=4.6m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
Datasheet: S85N042R , S85N042RN , S85N042RP , S85N042S , S85N048S , S85N16R , S85N16RN , S85N16RP , 10N60 , CRST037N10N , CRSS035N10N , DP3080 , HY3506P , HY3506B , LTP70N06P , NCE65TF130T , HG3P056N20S .
History: SPD07N20G | BF1109WR | 2SK3554-01
Keywords - S85N16S MOSFET datasheet
S85N16S cross reference
S85N16S equivalent finder
S85N16S lookup
S85N16S substitution
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History: SPD07N20G | BF1109WR | 2SK3554-01
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