All MOSFET. HGA025N06S Datasheet

 

HGA025N06S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGA025N06S
   Marking Code: GA025N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 109 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO-220F

 HGA025N06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGA025N06S Datasheet (PDF)

 ..1. Size:774K  cn hunteck
 hga025n06s.pdf

HGA025N06S HGA025N06S

HGA025N06S P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-220F 1.9RDS(on),typ m Enhanced Body diode dv/dt capability109 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Powe

 9.1. Size:919K  cn hunteck
 hga028ne6al.pdf

HGA025N06S HGA025N06S

HGA028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.7RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness82 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching an

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