All MOSFET. HGA055N10SL Datasheet

 

HGA055N10SL Datasheet and Replacement


   Type Designator: HGA055N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 323 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-220F
 

 HGA055N10SL substitution

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HGA055N10SL Datasheet (PDF)

 ..1. Size:788K  cn hunteck
 hga055n10sl.pdf pdf_icon

HGA055N10SL

HGA055N10SL P-1100V N-Ch Power MOSFET100 VVDSFeature4.9RDS(on),typ VGS=10V m Optimized for high speed smooth 5.8RDS(on),typ VGS=4.5V mswitching,Logic level 62.7 A ID Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and High Speed Circui

 9.1. Size:812K  cn hunteck
 hga059n12sl.pdf pdf_icon

HGA055N10SL

HGA059N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching, Logic Level5RDS(on),typ m Enhanced Body diode dv/dt capability67 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainPin2 Power Tools

 9.2. Size:812K  cn hunteck
 hga059n12s.pdf pdf_icon

HGA055N10SL

HGA059N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching4.7RDS(on),typ m Enhanced Body diode dv/dt capability66.7 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrainTO-220FPin2 Power Tools

 9.3. Size:973K  cn hunteck
 hga059n08a.pdf pdf_icon

HGA055N10SL

HGA059N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching5.3RDS(on),typ mW Enhanced Body diode dv/dt capability49 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit Pin2TO-220

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Datasheet: HGA028NE6AL , HGA040N06S , HGA040N06SL , HGA045NE4SL , HGA046NE6A , HGA046NE6AL , HGA053N06S , HGA053N06SL , IRF4905 , HGA058N08SL , HGA059N08A , HGA059N12S , HGA059N12SL , HGA080N10A , HGA080N10AL , HGA080N10S , HGA082N10M .

History: IPP25N06S3-25

Keywords - HGA055N10SL MOSFET datasheet

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