All MOSFET. FDS86252 Datasheet

 

FDS86252 Datasheet and Replacement


   Type Designator: FDS86252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1.6 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SO-8
      - MOSFET Cross-Reference Search

 

FDS86252 Datasheet (PDF)

 ..1. Size:258K  fairchild semi
fds86252.pdf pdf_icon

FDS86252

April 2011FDS86252N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 mFeatures General Description Max rDS(on) = 55 m at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 80 m at VGS = 6 V, ID = 3.7 Abeen especially tailored to minimize the on-state resistance and High performa

 ..2. Size:329K  onsemi
fds86252.pdf pdf_icon

FDS86252

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:251K  fairchild semi
fds86242.pdf pdf_icon

FDS86252

August 2010FDS86242N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren

 8.2. Size:238K  fairchild semi
fds86240.pdf pdf_icon

FDS86252

June 2010FDS86240N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 mFeatures General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HMS8N65D | FK330309 | IXTA220N075T7 | STP80NS04ZB | PK516BA | AP60T03GH | SML601R3AN

Keywords - FDS86252 MOSFET datasheet

 FDS86252 cross reference
 FDS86252 equivalent finder
 FDS86252 lookup
 FDS86252 substitution
 FDS86252 replacement

 

 
Back to Top

 


 
.