FDS86252 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDS86252
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 1.6 ns
Cossⓘ - Выходная емкость: 77 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
Тип корпуса: SO-8
- подбор MOSFET транзистора по параметрам
FDS86252 Datasheet (PDF)
fds86252.pdf

April 2011FDS86252N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 mFeatures General Description Max rDS(on) = 55 m at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 80 m at VGS = 6 V, ID = 3.7 Abeen especially tailored to minimize the on-state resistance and High performa
fds86252.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds86242.pdf

August 2010FDS86242N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren
fds86240.pdf

June 2010FDS86240N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 mFeatures General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre
Другие MOSFET... FDS86106 , SP8010E , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , 5N60 , FDS8638 , FDS8813NZ , SP632S , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ , FDS8858CZ .
History: IXTL2X240N055T | WMJ38N60C2 | 2SK2360 | CS5N70A4 | AO6804A | SM7507NSF | STW27NM60ND
History: IXTL2X240N055T | WMJ38N60C2 | 2SK2360 | CS5N70A4 | AO6804A | SM7507NSF | STW27NM60ND



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