FDS86252 - описание и поиск аналогов

 

FDS86252. Аналоги и основные параметры

Наименование производителя: FDS86252

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 1.6 ns

Cossⓘ - Выходная емкость: 77 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm

Тип корпуса: SO-8

Аналог (замена) для FDS86252

- подборⓘ MOSFET транзистора по параметрам

 

FDS86252 даташит

 ..1. Size:258K  fairchild semi
fds86252.pdfpdf_icon

FDS86252

April 2011 FDS86252 N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 m Features General Description Max rDS(on) = 55 m at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 80 m at VGS = 6 V, ID = 3.7 A been especially tailored to minimize the on-state resistance and High performa

 ..2. Size:329K  onsemi
fds86252.pdfpdf_icon

FDS86252

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:251K  fairchild semi
fds86242.pdfpdf_icon

FDS86252

August 2010 FDS86242 N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren

 8.2. Size:238K  fairchild semi
fds86240.pdfpdf_icon

FDS86252

June 2010 FDS86240 N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 m Features General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre

Другие MOSFET... FDS86106 , SP8010E , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , AON7410 , FDS8638 , FDS8813NZ , SP632S , FDS8817NZ , SP4412 , FDS8840NZ , FDS8842NZ , FDS8858CZ .

History: FDS8638 | TPCS8204

 

 

 

 

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