HGA120N10A Specs and Replacement

Type Designator: HGA120N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO-220F

HGA120N10A substitution

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HGA120N10A datasheet

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HGA120N10A

HGA120N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 12.5 RDS(on),typ mW Enhanced Body diode dv/dt capability 27 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in Telecoms and I... See More ⇒

Detailed specifications: HGA098N10A, HGA098N10AL, HGA098N10S, HGA100N12S, HGA100N12SL, HGA105N15M, HGA110N10SL, HGA115N15S, AON7506, HGA130N12S, HGA130N12SL, HGA155N15S, HGA170N10A, HGA170N10AL, HGA190N15S, HGA190N15SL, HGA195N15S

Keywords - HGA120N10A MOSFET specs

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