All MOSFET. HGA120N10A Datasheet

 

HGA120N10A Datasheet and Replacement


   Type Designator: HGA120N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO-220F
 

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HGA120N10A Datasheet (PDF)

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HGA120N10A

HGA120N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching12.5RDS(on),typ mW Enhanced Body diode dv/dt capability27 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in Telecoms and I

Datasheet: HGA098N10A , HGA098N10AL , HGA098N10S , HGA100N12S , HGA100N12SL , HGA105N15M , HGA110N10SL , HGA115N15S , IRFP250 , HGA130N12S , HGA130N12SL , HGA155N15S , HGA170N10A , HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S .

History: AM2N7002W | IRF7799L2TR1PBF

Keywords - HGA120N10A MOSFET datasheet

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