All MOSFET. HGA130N12S Datasheet

 

HGA130N12S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGA130N12S
   Marking Code: GA130N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: TO-220F

 HGA130N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGA130N12S Datasheet (PDF)

 ..1. Size:925K  cn hunteck
 hga130n12s.pdf

HGA130N12S HGA130N12S

P-1HGA130N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching10RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability36.9 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swit

 0.1. Size:929K  cn hunteck
 hga130n12sl.pdf

HGA130N12S HGA130N12S

P-1HGA130N12SL120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level9.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness36 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SIA449DJ

 

 
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