HGA130N12S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGA130N12S
Marking Code: GA130N12S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 37 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 26 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 230 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0125 Ohm
Package: TO-220F
HGA130N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGA130N12S Datasheet (PDF)
hga130n12s.pdf
P-1HGA130N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching10RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability36.9 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Swit
hga130n12sl.pdf
P-1HGA130N12SL120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level9.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness36 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
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