HGA130N12S Specs and Replacement

Type Designator: HGA130N12S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: TO-220F

HGA130N12S substitution

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HGA130N12S datasheet

 ..1. Size:925K  cn hunteck
hga130n12s.pdf pdf_icon

HGA130N12S

P-1 HGA130N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching 10 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 36.9 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit... See More ⇒

 0.1. Size:929K  cn hunteck
hga130n12sl.pdf pdf_icon

HGA130N12S

P-1 HGA130N12SL 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 9.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 36 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain... See More ⇒

Detailed specifications: HGA098N10AL, HGA098N10S, HGA100N12S, HGA100N12SL, HGA105N15M, HGA110N10SL, HGA115N15S, HGA120N10A, STP80NF70, HGA130N12SL, HGA155N15S, HGA170N10A, HGA170N10AL, HGA190N15S, HGA190N15SL, HGA195N15S, HGA1K2N20ML

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