HGA130N12SL Specs and Replacement
Type Designator: HGA130N12SL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 222 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
Package: TO-220F
HGA130N12SL substitution
- MOSFET ⓘ Cross-Reference Search
HGA130N12SL datasheet
hga130n12sl.pdf
P-1 HGA130N12SL 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 9.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 12.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 36 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain... See More ⇒
hga130n12s.pdf
P-1 HGA130N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching 10 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 36.9 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 120 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit... See More ⇒
Detailed specifications: HGA098N10S, HGA100N12S, HGA100N12SL, HGA105N15M, HGA110N10SL, HGA115N15S, HGA120N10A, HGA130N12S, IRFP450, HGA155N15S, HGA170N10A, HGA170N10AL, HGA190N15S, HGA190N15SL, HGA195N15S, HGA1K2N20ML, HGA1K2N25ML
Keywords - HGA130N12SL MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
