All MOSFET. HGA155N15S Datasheet

 

HGA155N15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGA155N15S
   Marking Code: GA155N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220F

 HGA155N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGA155N15S Datasheet (PDF)

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 hga155n15s.pdf

HGA155N15S HGA155N15S

P-1HGA155N15S150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability13.5RDS(on),typ mW Enhanced Avalanche Ruggedness33 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDrai

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