HGA155N15S Specs and Replacement

Type Designator: HGA155N15S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO-220F

HGA155N15S substitution

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HGA155N15S datasheet

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HGA155N15S

P-1 HGA155N15S 150V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 150 V VDS Enhanced Body diode dv/dt capability 13.5 RDS(on),typ mW Enhanced Avalanche Ruggedness 33 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools Drai... See More ⇒

Detailed specifications: HGA100N12S, HGA100N12SL, HGA105N15M, HGA110N10SL, HGA115N15S, HGA120N10A, HGA130N12S, HGA130N12SL, TK10A60D, HGA170N10A, HGA170N10AL, HGA190N15S, HGA190N15SL, HGA195N15S, HGA1K2N20ML, HGA1K2N25ML, HGA2K4N25ML

Keywords - HGA155N15S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.