HGA155N15S Datasheet and Replacement
Type Designator: HGA155N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 183 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO-220F
HGA155N15S substitution
HGA155N15S Datasheet (PDF)
hga155n15s.pdf
P-1HGA155N15S150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability13.5RDS(on),typ mW Enhanced Avalanche Ruggedness33 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDrai
Datasheet: HGA100N12S , HGA100N12SL , HGA105N15M , HGA110N10SL , HGA115N15S , HGA120N10A , HGA130N12S , HGA130N12SL , TK10A60D , HGA170N10A , HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S , HGA1K2N20ML , HGA1K2N25ML , HGA2K4N25ML .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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