All MOSFET. HGA155N15S Datasheet

 

HGA155N15S Datasheet and Replacement


   Type Designator: HGA155N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-220F
 

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HGA155N15S Datasheet (PDF)

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HGA155N15S

P-1HGA155N15S150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability13.5RDS(on),typ mW Enhanced Avalanche Ruggedness33 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsDrai

Datasheet: HGA100N12S , HGA100N12SL , HGA105N15M , HGA110N10SL , HGA115N15S , HGA120N10A , HGA130N12S , HGA130N12SL , IRFZ24N , HGA170N10A , HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S , HGA1K2N20ML , HGA1K2N25ML , HGA2K4N25ML .

History: 2SK1459 | IPB34CN10N | FQD2N50TF | AP6P025I | STD35NF06T4 | P2610BT | DMN3035LWN

Keywords - HGA155N15S MOSFET datasheet

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