All MOSFET. HGA170N10A Datasheet

 

HGA170N10A Datasheet and Replacement


   Type Designator: HGA170N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO-220F
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HGA170N10A Datasheet (PDF)

 ..1. Size:905K  cn hunteck
 hga170n10a.pdf pdf_icon

HGA170N10A

HGA170N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 0.1. Size:907K  cn hunteck
 hga170n10al.pdf pdf_icon

HGA170N10A

HGA170N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability21RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness21.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFB9N65APBF | BRCS200P03DP | IRFB3004GPBF | APT1003R5CN | STF9NK90Z | LKK47-06C5 | TSM4424CS

Keywords - HGA170N10A MOSFET datasheet

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