All MOSFET. HGA170N10A Datasheet

 

HGA170N10A Datasheet and Replacement


   Type Designator: HGA170N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO-220F
 

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HGA170N10A Datasheet (PDF)

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 hga170n10a.pdf pdf_icon

HGA170N10A

HGA170N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 0.1. Size:907K  cn hunteck
 hga170n10al.pdf pdf_icon

HGA170N10A

HGA170N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability21RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness21.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

Datasheet: HGA100N12SL , HGA105N15M , HGA110N10SL , HGA115N15S , HGA120N10A , HGA130N12S , HGA130N12SL , HGA155N15S , P60NF06 , HGA170N10AL , HGA190N15S , HGA190N15SL , HGA195N15S , HGA1K2N20ML , HGA1K2N25ML , HGA2K4N25ML , HGA320N20S .

History: BRCS2N65IP | 2SK2151 | SIHFB9N65A | SUM110N08-07P | SI4477DY | IXFK21N100F | SVF2N60CN

Keywords - HGA170N10A MOSFET datasheet

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