HGA170N10AL Specs and Replacement
Type Designator: HGA170N10AL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 147 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO-220F
HGA170N10AL substitution
- MOSFET ⓘ Cross-Reference Search
HGA170N10AL datasheet
hga170n10al.pdf
HGA170N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 15 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 21 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 21.9 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒
hga170n10a.pdf
HGA170N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 17.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit ... See More ⇒
Detailed specifications: HGA105N15M, HGA110N10SL, HGA115N15S, HGA120N10A, HGA130N12S, HGA130N12SL, HGA155N15S, HGA170N10A, BS170, HGA190N15S, HGA190N15SL, HGA195N15S, HGA1K2N20ML, HGA1K2N25ML, HGA2K4N25ML, HGA320N20S, HGB009NE6A
Keywords - HGA170N10AL MOSFET specs
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