All MOSFET. HGA170N10AL Datasheet

 

HGA170N10AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGA170N10AL
   Marking Code: GA170N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 17 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 147 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-220F

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HGA170N10AL Datasheet (PDF)

 ..1. Size:907K  cn hunteck
 hga170n10al.pdf

HGA170N10AL HGA170N10AL

HGA170N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level15RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability21RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness21.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 4.1. Size:905K  cn hunteck
 hga170n10a.pdf

HGA170N10AL HGA170N10AL

HGA170N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SIA449DJ

 

 
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