HGK014N08A Specs and Replacement
Type Designator: HGK014N08A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 2871 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TO-247
HGK014N08A substitution
- MOSFET ⓘ Cross-Reference Search
HGK014N08A datasheet
hgb014n08a hgk014n08a.pdf
, P-1 HGB014N08A HGK014N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Smooth Switching TO-263 1.1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 371 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectificatio... See More ⇒
hgb016n06s hgk018n06s hgp019n06s.pdf
HGB016N06S , HGK018N06S P-1 HGP019N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.45 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.67 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 340 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) ... See More ⇒
hgb012ne6a hgk012ne6a.pdf
, P-1 HGB012NE6A HGK012NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Smooth Switching TO-263 1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 417 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free Application Synchronous Rectification ... See More ⇒
hgb019ne6a hgk019ne6a hgp019ne6a.pdf
HGB019NE6A HGP019NE6A , P-1 HGK019NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 1.35 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited) 180 A ID (Pack... See More ⇒
Detailed specifications: HGA1K2N25ML, HGA2K4N25ML, HGA320N20S, HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A, IRF2807, HGB016N06S, HGK018N06S, HGP019N06S, HGB016NE6A, HGB017N10S, HGB019NE6A, HGK019NE6A, HGP019NE6A
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
