HGP019N06S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP019N06S
Marking Code: GP019N06S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 124 nC
Rise Time (tr): 27 nS
Drain-Source Capacitance (Cd): 4050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0019 Ohm
Package: TO-220
HGP019N06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP019N06S Datasheet (PDF)
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HGB019NE6A HGP019NE6A, P-1HGK019NE6A65V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching TO-263 1.35RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited)180 A ID (Pack
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