All MOSFET. HGP019N06S Datasheet

 

HGP019N06S Datasheet and Replacement


   Type Designator: HGP019N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 4050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: TO-220
 

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HGP019N06S Datasheet (PDF)

 ..1. Size:863K  cn hunteck
 hgb016n06s hgk018n06s hgp019n06s.pdf pdf_icon

HGP019N06S

HGB016N06S , HGK018N06S P-1HGP019N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.45RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.55RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.67RDS(on),typ m 100% UIS Tested, 100% Rg Tested340 AID (Sillicon Limited) Lead Free120 AID (Package Limited)

 7.1. Size:1282K  cn hunteck
 hgb019ne6a hgk019ne6a hgp019ne6a.pdf pdf_icon

HGP019N06S

HGB019NE6A HGP019NE6A, P-1HGK019NE6A65V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching TO-263 1.35RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited)180 A ID (Pack

Datasheet: HGB009NE6A , HGB012N08A , HGB012NE6A , HGK012NE6A , HGB014N08A , HGK014N08A , HGB016N06S , HGK018N06S , IRF830 , HGB016NE6A , HGB017N10S , HGB019NE6A , HGK019NE6A , HGP019NE6A , HGB020N10S , HGK020N10S , HGP020N10S .

History: AM4420N | UTC654 | VBZE04N03 | SSM3K56CT | AUIRFP4227 | IXTJ3N150 | AM90N06-04M2B

Keywords - HGP019N06S MOSFET datasheet

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