HGP019N06S Specs and Replacement
Type Designator: HGP019N06S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 4050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: TO-220
HGP019N06S substitution
- MOSFET ⓘ Cross-Reference Search
HGP019N06S datasheet
hgb016n06s hgk018n06s hgp019n06s.pdf
HGB016N06S , HGK018N06S P-1 HGP019N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.45 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.67 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 340 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) ... See More ⇒
hgb019ne6a hgk019ne6a hgp019ne6a.pdf
HGB019NE6A HGP019NE6A , P-1 HGK019NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 1.35 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited) 180 A ID (Pack... See More ⇒
Detailed specifications: HGB009NE6A, HGB012N08A, HGB012NE6A, HGK012NE6A, HGB014N08A, HGK014N08A, HGB016N06S, HGK018N06S, 2N60, HGB016NE6A, HGB017N10S, HGB019NE6A, HGK019NE6A, HGP019NE6A, HGB020N10S, HGK020N10S, HGP020N10S
Keywords - HGP019N06S MOSFET specs
HGP019N06S cross reference
HGP019N06S equivalent finder
HGP019N06S pdf lookup
HGP019N06S substitution
HGP019N06S replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
