HGB017N10S MOSFET Datasheet: N-Ch, 100V, 240A. Full specification with pinout and replacement list

HGB017N10S Specs and Replacement

   Type Designator: HGB017N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 2657 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TO-263-7

HGB017N10S substitution

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HGB017N10S datasheet

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HGB017N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 1.4 RDS(on),typ mW Enhanced Avalanche Ruggedness 354 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High S... See More ⇒

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P-1 HGB012N08A 80V N-Ch Power MOSFET Feature High Speed Power Smooth Switching 80 V VDS Enhanced Body diode dv/dt capability 0.9 RDS(on),typ mW Enhanced Avalanche Ruggedness 428 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 240 A ID (Package Limited) Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Cir... See More ⇒

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HGB016NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 1.35 RDS(on),typ mW Enhanced Avalanche Ruggedness 363 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 180 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and ... See More ⇒