All MOSFET. HGB017N10S Datasheet

 

HGB017N10S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGB017N10S
   Marking Code: GB017N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 240 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 2657 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TO-263-7

 HGB017N10S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB017N10S Datasheet (PDF)

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top