HGP019NE6A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP019NE6A
Marking Code: GP019NE6A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 130 nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 3042 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0016 Ohm
Package: TO-220
HGP019NE6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP019NE6A Datasheet (PDF)
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