HGP019NE6A Specs and Replacement

Type Designator: HGP019NE6A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 3042 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: TO-220

HGP019NE6A substitution

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HGP019NE6A datasheet

 ..1. Size:1282K  cn hunteck
 hgb019ne6a hgk019ne6a hgp019ne6a.pdf pdf_icon

HGP019NE6A

HGB019NE6A HGP019NE6A , P-1 HGK019NE6A 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching TO-263 1.35 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.65 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 363 A Lead Free, Halogen Free ID (Sillicon Limited) 180 A ID (Pack... See More ⇒

 7.1. Size:863K  cn hunteck
 hgb016n06s hgk018n06s hgp019n06s.pdf pdf_icon

HGP019NE6A

HGB016N06S , HGK018N06S P-1 HGP019N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.45 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.55 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.67 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 340 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) ... See More ⇒

Detailed specifications: HGK014N08A, HGB016N06S, HGK018N06S, HGP019N06S, HGB016NE6A, HGB017N10S, HGB019NE6A, HGK019NE6A, IRFB31N20D, HGB020N10S, HGK020N10S, HGP020N10S, HGB020NE4S, HGK020NE4S, HGP020NE4S, HGB021N08A, HGP021N08A

Keywords - HGP019NE6A MOSFET specs

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