HGK025N06S MOSFET Datasheet: N-Ch, 60V, 120A. Full specification with pinout and replacement list

HGK025N06S Specs and Replacement

   Type Designator: HGK025N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO-247

HGK025N06S substitution

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HGK025N06S datasheet

..1. Size:870K cn hunteck
hgb025n06s hgk025n06s hgp025n06s.pdf pdf_icon

, HGB025N06S HGK025N06S P-1 HGP025N06S 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching TO-263 1.6 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.8 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 1.9 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 230 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap... See More ⇒

9.1. Size:861K cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

, HGB021N08S HGK023N08S P-1 HGP024N08S 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 1.92 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 2.00 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 290 A ID (Sillicon Limited) Lead Free 205 A ID (Package Limited) ... See More ⇒

9.2. Size:1129K cn hunteck
hgb020ne4s hgk020ne4s hgp020ne4s.pdf pdf_icon

, P-1 HGB020NE4S HGK020NE4S HGP020NE4S 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching TO-263 1.75 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 1.75 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 1.75 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 288 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Appli... See More ⇒

9.3. Size:1042K cn hunteck
hgb027n10a hgk027n10a hgp027n10a.pdf pdf_icon

HGB027N10A , P-1 HGK027N10A HGP027N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche Ruggedness RDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested 248 A ID (Sillicon Limited) Lead Free, Halogen Free ... See More ⇒