All MOSFET. HGK025N06S Datasheet

 

HGK025N06S Datasheet and Replacement


   Type Designator: HGK025N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO-247
 

 HGK025N06S substitution

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HGK025N06S Datasheet (PDF)

 ..1. Size:870K  cn hunteck
 hgb025n06s hgk025n06s hgp025n06s.pdf pdf_icon

HGK025N06S

,HGB025N06S HGK025N06S P-1HGP025N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.6RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.8RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.9RDS(on),typ m 100% UIS Tested, 100% Rg Tested230 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

 9.1. Size:861K  cn hunteck
 hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGK025N06S

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

 9.2. Size:1129K  cn hunteck
 hgb020ne4s hgk020ne4s hgp020ne4s.pdf pdf_icon

HGK025N06S

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

 9.3. Size:1042K  cn hunteck
 hgb027n10a hgk027n10a hgp027n10a.pdf pdf_icon

HGK025N06S

HGB027N10A , P-1HGK027N10AHGP027N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingRDS(on),typ TO-263 VGS=10V 2.2 mW Enhanced Body diode dv/dt capabilityRDS(on),typ TO-247 VGS=10V 2.4 mW Enhanced Avalanche RuggednessRDS(on),typ TO-220 VGS=10V 2.5 mW 100% UIS Tested, 100% Rg Tested248 AID (Sillicon Limited) Lead Free, Halogen Free

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Datasheet: HGB021N08A , HGP021N08A , HGB021N08S , HGK023N08S , HGP024N08S , HGB023NE6A , HGP023NE6A , HGB025N06S , HY1906P , HGP025N06S , HGB025N10A , HGB025N12S , HGB027N10A , HGK027N10A , HGP027N10A , HGB027N10S , HGK029N10S .

History: AP9973GJ-HF | SFF440 | SIHF9530S

Keywords - HGK025N06S MOSFET datasheet

 HGK025N06S cross reference
 HGK025N06S equivalent finder
 HGK025N06S lookup
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