All MOSFET. HGK029N10S Datasheet

 

HGK029N10S Datasheet and Replacement


   Type Designator: HGK029N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: TO-247
 

 HGK029N10S substitution

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HGK029N10S Datasheet (PDF)

 ..1. Size:976K  cn hunteck
 hgb027n10s hgk029n10s hgp030n10s.pdf pdf_icon

HGK029N10S

, P-1HGB027N10S HGK029N10SHGP030N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.25RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 2.42RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 2.50RDS(on),typ mW 100% UIS Tested, 100% Rg Tested260 AID (Sillicon Limited) Lead Free120 AID (Package Limited)App

 9.1. Size:861K  cn hunteck
 hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGK029N10S

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

 9.2. Size:1129K  cn hunteck
 hgb020ne4s hgk020ne4s hgp020ne4s.pdf pdf_icon

HGK029N10S

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

 9.3. Size:870K  cn hunteck
 hgb025n06s hgk025n06s hgp025n06s.pdf pdf_icon

HGK029N10S

,HGB025N06S HGK025N06S P-1HGP025N06S60V N-Ch Power MOSFETFeature60 VVDS High Speed Power SwitchingTO-263 1.6RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.8RDS(on),typ m Enhanced Avalanche RuggednessTO-220 1.9RDS(on),typ m 100% UIS Tested, 100% Rg Tested230 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

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Datasheet: HGK025N06S , HGP025N06S , HGB025N10A , HGB025N12S , HGB027N10A , HGK027N10A , HGP027N10A , HGB027N10S , IRF740 , HGP030N10S , HGB027N12S , HGP027N12S , HGB028N08A , HGP028N08A , HGB028NE6A , HGP028NE6A , HGB029N06SL .

History: SPU07N60C3 | F5020-S

Keywords - HGK029N10S MOSFET datasheet

 HGK029N10S cross reference
 HGK029N10S equivalent finder
 HGK029N10S lookup
 HGK029N10S substitution
 HGK029N10S replacement

 

 
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