All MOSFET. HGB029NE4SL Datasheet

 

HGB029NE4SL Datasheet and Replacement


   Type Designator: HGB029NE4SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1367 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO-263
 

 HGB029NE4SL substitution

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HGB029NE4SL Datasheet (PDF)

 ..1. Size:823K  cn hunteck
hgb029ne4sl hgp029ne4sl.pdf pdf_icon

HGB029NE4SL

HGB029NE4SL HGP029NE4SL P-1,45V N-Ch Power MOSFET45 VVDSFeature2.2RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level2.9RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability2.5RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness3.2RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested182 AID (Sillicon Limited)

 7.1. Size:812K  cn hunteck
hgb029n06sl hgp029n06sl.pdf pdf_icon

HGB029NE4SL

HGB029N06SL HGP029N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature1.8RDS(on),typ TO-263 VGS=10V m Optimized for high speed switching, Logic LevelVGS=4.5V2.7RDS(on),typ m Enhanced Body diode dv/dt capability2.1RDS(on),typ TO-220 VGS=10V m Enhanced Avalanche RuggednessVGS=4.5V3.0RDS(on),typ m 100% UIS Tested, 100% Rg Tested198 AID (Si

 9.1. Size:861K  cn hunteck
hgb021n08s hgk023n08s hgp024n08s.pdf pdf_icon

HGB029NE4SL

,HGB021N08S HGK023N08S P-1HGP024N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 1.92RDS(on),typ m Enhanced Avalanche RuggednessTO-220 2.00RDS(on),typ m 100% UIS Tested, 100% Rg Tested290 AID (Sillicon Limited) Lead Free205 AID (Package Limited)

 9.2. Size:1129K  cn hunteck
hgb020ne4s hgk020ne4s hgp020ne4s.pdf pdf_icon

HGB029NE4SL

, P-1HGB020NE4S HGK020NE4SHGP020NE4S45V N-Ch Power MOSFETFeature45 VVDS High Speed Power SwitchingTO-263 1.75RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 1.75RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 1.75RDS(on),typ mW 100% UIS Tested, 100% Rg Tested288 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Appli

Datasheet: HGB027N12S , HGP027N12S , HGB028N08A , HGP028N08A , HGB028NE6A , HGP028NE6A , HGB029N06SL , HGP029N06SL , IRFP260N , HGP029NE4SL , HGB035N08A , HGP035N08A , HGB035N10A , HGK035N10A , HGP035N10A , HGB037N10S , HGK037N10S .

History: 2N65F | RJL5018DPK | NVMFS5C406NL | MTN2510LE3 | PKCD0BB | AO4854 | IXFK140N30P

Keywords - HGB029NE4SL MOSFET datasheet

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 HGB029NE4SL equivalent finder
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