All MOSFET. HGP035N08A Datasheet

 

HGP035N08A Datasheet and Replacement


   Type Designator: HGP035N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 172 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 161 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 703 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO-220
 

 HGP035N08A substitution

   - MOSFET ⓘ Cross-Reference Search

 

HGP035N08A Datasheet (PDF)

 ..1. Size:968K  cn hunteck
 hgb035n08a hgp035n08a.pdf pdf_icon

HGP035N08A

HGB035N08A , HGP035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.3RDS(on),typ mW Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hig

 0.1. Size:910K  cn hunteck
 hgp035n08al.pdf pdf_icon

HGP035N08A

HGP035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness150 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching a

 7.1. Size:1072K  cn hunteck
 hgb035n10a hgk035n10a hgp035n10a.pdf pdf_icon

HGP035N08A

, P-1HGB035N10A HGK035N10AHGP035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness3.3RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ TO-220 mW Lead Free184 AID (Sillicon Limited)Application120 AID (Package Lim

 9.1. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGP035N08A

HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

SHOW MORE

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2N6764JTXV | FDB8441

Keywords - HGP035N08A MOSFET datasheet

 HGP035N08A cross reference
 HGP035N08A equivalent finder
 HGP035N08A lookup
 HGP035N08A substitution
 HGP035N08A replacement

 

 
Back to Top

 


 
.