All MOSFET. HGB035N10A Datasheet

 

HGB035N10A Datasheet and Replacement


   Type Designator: HGB035N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 283 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 923 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-263
 

 HGB035N10A substitution

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HGB035N10A Datasheet (PDF)

 ..1. Size:1072K  cn hunteck
 hgb035n10a hgk035n10a hgp035n10a.pdf pdf_icon

HGB035N10A

, P-1HGB035N10A HGK035N10AHGP035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness3.3RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ TO-220 mW Lead Free184 AID (Sillicon Limited)Application120 AID (Package Lim

 7.1. Size:968K  cn hunteck
 hgb035n08a hgp035n08a.pdf pdf_icon

HGB035N10A

HGB035N08A , HGP035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.3RDS(on),typ mW Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hig

 9.1. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGB035N10A

HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

 9.2. Size:1604K  cn hunteck
 hgb037n10t hgp037n10t hga037n10t.pdf pdf_icon

HGB035N10A

HGB037N10T HGP037N10T P-1,HGA037N10T100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Smooth Switching3.7RDS(on),max mW Enhanced Body diode dv/dt capability168 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools

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Datasheet: HGB028NE6A , HGP028NE6A , HGB029N06SL , HGP029N06SL , HGB029NE4SL , HGP029NE4SL , HGB035N08A , HGP035N08A , IRF3710 , HGK035N10A , HGP035N10A , HGB037N10S , HGK037N10S , HGP037N10S , HGB037N10T , HGP037N10T , HGA037N10T .

History: FQP3N25 | D10PF06 | 6N70KG-TM3-T | 2SK2521-01 | 1N60L-TM3-T | ME7820S-G | DMN2215UDM

Keywords - HGB035N10A MOSFET datasheet

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