HGB035N10A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HGB035N10A
Маркировка: GB035N10A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 283 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 87 nC
trⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 923 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
Тип корпуса: TO-263
Аналог (замена) для HGB035N10A
HGB035N10A Datasheet (PDF)
hgb035n10a hgk035n10a hgp035n10a.pdf
, P-1HGB035N10A HGK035N10AHGP035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness3.3RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ TO-220 mW Lead Free184 AID (Sillicon Limited)Application120 AID (Package Lim
hgb035n08a hgp035n08a.pdf
HGB035N08A , HGP035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.3RDS(on),typ mW Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hig
hgb037n10s hgk037n10s hgp037n10s.pdf
HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap
hgb037n10t hgp037n10t hga037n10t.pdf
HGB037N10T HGP037N10T P-1,HGA037N10T100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Smooth Switching3.7RDS(on),max mW Enhanced Body diode dv/dt capability168 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools
hgb039n12s hgk039n12s hgp039n12s.pdf
,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard
hgb039n08a hgp039n08a.pdf
,HGB039N08A HGP039N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.2RDS(on),typ m Enhanced Avalanche Ruggedness196 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectific
hgb037n15m.pdf
P-1HGB037N15M150V N-Ch Power MOSFETFeature High Speed Power Smooth Switching150 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ mW Enhanced Avalanche Ruggedness220 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitDrain Power ToolsPin4TO-263-7
hgb039n15m hgp039n15m.pdf
, P-1HGB039N15M HGP039N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.6RDS(on),typ mW Enhanced Avalanche Ruggedness206 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificat
hgb039n08s hgk039n08s hgp039n08s.pdf
,HGB039N08S HGK039N08S P-1HGP039N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3.1RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.2RDS(on),typ m 100% UIS Tested, 100% Rg Tested187 AID (Sillicon Limited) Lead Free120 AID (Package Limit
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Список транзисторов
Обновления
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