HGP035N10A
MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP035N10A
Marking Code: GP035N10A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 283
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 87
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 923
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037
Ohm
Package:
TO-220
HGP035N10A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP035N10A
Datasheet (PDF)
..1. Size:1072K cn hunteck
hgb035n10a hgk035n10a hgp035n10a.pdf 
, P-1HGB035N10A HGK035N10AHGP035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness3.3RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ TO-220 mW Lead Free184 AID (Sillicon Limited)Application120 AID (Package Lim
7.1. Size:968K cn hunteck
hgb035n08a hgp035n08a.pdf
HGB035N08A , HGP035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power SwitchingTO-263 3RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.3RDS(on),typ mW Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hig
7.2. Size:910K cn hunteck
hgp035n08al.pdf
HGP035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3.2RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness150 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching a
9.1. Size:918K cn hunteck
hgb037n10s hgk037n10s hgp037n10s.pdf
HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap
9.2. Size:1604K cn hunteck
hgb037n10t hgp037n10t hga037n10t.pdf
HGB037N10T HGP037N10T P-1,HGA037N10T100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Smooth Switching3.7RDS(on),max mW Enhanced Body diode dv/dt capability168 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools
9.3. Size:925K cn hunteck
hgb039n12s hgk039n12s hgp039n12s.pdf
,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard
9.4. Size:807K cn hunteck
hgb039n08a hgp039n08a.pdf
,HGB039N08A HGP039N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.2RDS(on),typ m Enhanced Avalanche Ruggedness196 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectific
9.5. Size:973K cn hunteck
hgb039n15m hgp039n15m.pdf
, P-1HGB039N15M HGP039N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.6RDS(on),typ mW Enhanced Avalanche Ruggedness206 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificat
9.6. Size:976K cn hunteck
hgb027n10s hgk029n10s hgp030n10s.pdf
, P-1HGB027N10S HGK029N10SHGP030N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.25RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 2.42RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 2.50RDS(on),typ mW 100% UIS Tested, 100% Rg Tested260 AID (Sillicon Limited) Lead Free120 AID (Package Limited)App
9.7. Size:851K cn hunteck
hgb039n08s hgk039n08s hgp039n08s.pdf
,HGB039N08S HGK039N08S P-1HGP039N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3.1RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.2RDS(on),typ m 100% UIS Tested, 100% Rg Tested187 AID (Sillicon Limited) Lead Free120 AID (Package Limit
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