All MOSFET. HGK039N12S Datasheet

 

HGK039N12S Datasheet and Replacement


   Type Designator: HGK039N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 357 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 716 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-247
 

 HGK039N12S substitution

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HGK039N12S Datasheet (PDF)

 ..1. Size:925K  cn hunteck
 hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGK039N12S

,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard

 7.1. Size:851K  cn hunteck
 hgb039n08s hgk039n08s hgp039n08s.pdf pdf_icon

HGK039N12S

,HGB039N08S HGK039N08S P-1HGP039N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3.1RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.2RDS(on),typ m 100% UIS Tested, 100% Rg Tested187 AID (Sillicon Limited) Lead Free120 AID (Package Limit

 9.1. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGK039N12S

HGB037N10S HGK037N10S P-1,HGP037N10S100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 2.8RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.1RDS(on),typ m 100% UIS Tested, 100% Rg Tested190 AID (Sillicon Limited) Lead Free120 AID (Package Limited)Ap

 9.2. Size:1072K  cn hunteck
 hgb035n10a hgk035n10a hgp035n10a.pdf pdf_icon

HGK039N12S

, P-1HGB035N10A HGK035N10AHGP035N10A100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability3.1RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness3.3RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested3.4RDS(on),typ TO-220 mW Lead Free184 AID (Sillicon Limited)Application120 AID (Package Lim

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Datasheet: HGA037N10T , HGB037N15M , HGB039N08A , HGP039N08A , HGB039N08S , HGK039N08S , HGP039N08S , HGB039N12S , K4145 , HGP039N12S , HGB039N15M , HGP039N15M , HGB040N06S , HGP040N06S , HGB040N06SL , HGP040N06SL , HGB041N15S .

History: SVS65R240FJDD4 | AO4821 | KI4464DY | HGB029N06SL | HGP039N08S | HTD950P06 | 2SK1169

Keywords - HGK039N12S MOSFET datasheet

 HGK039N12S cross reference
 HGK039N12S equivalent finder
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