All MOSFET. HGB040N06S Datasheet

 

HGB040N06S Datasheet and Replacement


   Type Designator: HGB040N06S
   Marking Code: GB040N06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 53 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 984 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-263
 

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HGB040N06S Datasheet (PDF)

 ..1. Size:810K  cn hunteck
 hgb040n06s hgp040n06s.pdf pdf_icon

HGB040N06S

HGB040N06S HGP040N06S P-1,60V N-Ch Power MOSFET60 VVDSFeatureTO-263 3.1RDS(on),typ m Optimized for high speed switchingTO-220 3.4RDS(on),typ m Enhanced Body diode dv/dt capability156 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synch

 0.1. Size:822K  cn hunteck
 hgb040n06sl hgp040n06sl.pdf pdf_icon

HGB040N06S

HGB040N06SL HGP040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature2.9RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.1RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.4RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested140 AID (Sillicon Limited)

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGB040N06S

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

 9.2. Size:919K  cn hunteck
 hgb046ne6a hgp046ne6a.pdf pdf_icon

HGB040N06S

, P-1HGB046NE6A HGP046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ mW Enhanced Avalanche Ruggedness108 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

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Keywords - HGB040N06S MOSFET datasheet

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