All MOSFET. HGB042N10A Datasheet

 

HGB042N10A Datasheet and Replacement


   Type Designator: HGB042N10A
   Marking Code: GB042N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 167 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 75 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 1110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-263
 

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HGB042N10A Datasheet (PDF)

 ..1. Size:835K  cn hunteck
 hgb042n10a hgp042n10a.pdf pdf_icon

HGB042N10A

,HGB042N10A HGP042N10A P-1100V N-Ch Power MOSFET100 VVDSFeatureTO-263 3.4RDS(on),typ m Optimized for high speed smooth switchingTO-220 3.7RDS(on),typ m Enhanced Body diode dv/dt capability167 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication DC-DC Conversion Drain Hard Swit

 5.1. Size:802K  cn hunteck
 hgb042n10s hgp042n10s.pdf pdf_icon

HGB042N10A

,HGB042N10S HGP042N10S P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.7RDS(on),typ m Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGB042N10A

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

 9.2. Size:822K  cn hunteck
 hgb040n06sl hgp040n06sl.pdf pdf_icon

HGB042N10A

HGB040N06SL HGP040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature2.9RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.1RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.4RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested140 AID (Sillicon Limited)

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Keywords - HGB042N10A MOSFET datasheet

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