HGP042N10A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP042N10A
Marking Code: GP042N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 167 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO-220
HGP042N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP042N10A Datasheet (PDF)
hgb042n10a hgp042n10a.pdf
,HGB042N10A HGP042N10A P-1100V N-Ch Power MOSFET100 VVDSFeatureTO-263 3.4RDS(on),typ m Optimized for high speed smooth switchingTO-220 3.7RDS(on),typ m Enhanced Body diode dv/dt capability167 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication DC-DC Conversion Drain Hard Swit
hgp042n10al.pdf
HGP042N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS Optimized for high speed smooth switching,Logic level3.6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability4.8RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness166 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drai
hgb042n10s hgp042n10s.pdf
,HGB042N10S HGP042N10S P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.7RDS(on),typ m Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and
hgb043n15s hgk043n15s hgp043n15s.pdf
, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous
hgb040n06sl hgp040n06sl.pdf
HGB040N06SL HGP040N06SL P-1,60V N-Ch Power MOSFET60 VVDSFeature2.9RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.1RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability3.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness4.4RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested140 AID (Sillicon Limited)
hgb046ne6a hgp046ne6a.pdf
, P-1HGB046NE6A HGP046NE6A65V N-Ch Power MOSFETFeature65 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ mW Enhanced Avalanche Ruggedness108 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain
hgb049n10s hgp049n10s.pdf
HGB049N10S HGP049N10S P-1,100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 4.2RDS(on),typ m Enhanced Avalanche Ruggedness152 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synchronous Rectification
hgb047n12s hgp047n12s.pdf
, P-1HGB047N12S HGP047N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth SwitchingTO-263 3.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.9RDS(on),typ mW Enhanced Avalanche Ruggedness167 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switchi
hgp045ne4sl.pdf
HGP045NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature3.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability114 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SM
hgb040n06s hgp040n06s.pdf
HGB040N06S HGP040N06S P-1,60V N-Ch Power MOSFET60 VVDSFeatureTO-263 3.1RDS(on),typ m Optimized for high speed switchingTO-220 3.4RDS(on),typ m Enhanced Body diode dv/dt capability156 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synch
hgb045n15s hgk045n15s hgp045n15s.pdf
, P-1HGB045N15S HGK045N15SHGP045N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 4.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.1RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.1RDS(on),typ mW 100% UIS Tested, 100% Rg Tested194 AID (Sillicon Limited) Lead Free180 AID (Package Limited)
hgb046ne6al hgp046ne6al.pdf
, P-1HGB046NE6ALHGP046NE6AL65V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level3.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability6RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness4.2RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested6.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free108 AID (Sillic
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMJ53N60C4
History: WMJ53N60C4
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