All MOSFET. HGP042N10S Datasheet

 

HGP042N10S Datasheet and Replacement


   Type Designator: HGP042N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 161 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1066 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO-220
 

 HGP042N10S substitution

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HGP042N10S Datasheet (PDF)

 ..1. Size:802K  cn hunteck
 hgb042n10s hgp042n10s.pdf pdf_icon

HGP042N10S

,HGB042N10S HGP042N10S P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 3.4RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.7RDS(on),typ m Enhanced Avalanche Ruggedness161 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-220TO-263 Hard Switching and

 5.1. Size:835K  cn hunteck
 hgb042n10a hgp042n10a.pdf pdf_icon

HGP042N10S

,HGB042N10A HGP042N10A P-1100V N-Ch Power MOSFET100 VVDSFeatureTO-263 3.4RDS(on),typ m Optimized for high speed smooth switchingTO-220 3.7RDS(on),typ m Enhanced Body diode dv/dt capability167 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication DC-DC Conversion Drain Hard Swit

 5.2. Size:783K  cn hunteck
 hgp042n10al.pdf pdf_icon

HGP042N10S

HGP042N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS Optimized for high speed smooth switching,Logic level3.6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability4.8RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness166 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drai

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGP042N10S

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

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Datasheet: HGB040N06S , HGP040N06S , HGB040N06SL , HGP040N06SL , HGB041N15S , HGB042N10A , HGP042N10A , HGB042N10S , AON7410 , HGB043N15S , HGK043N15S , HGP043N15S , HGB045N15S , HGK045N15S , HGP045N15S , HGB046NE6A , HGP046NE6A .

History: SPC4533

Keywords - HGP042N10S MOSFET datasheet

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